Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. Th...

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Published in:IEEE electron device letters 2017-08, Vol.38 (8), p.1019-1022
Main Authors: Wei Wu, Huaqiang Wu, Bin Gao, Ning Deng, Shimeng Yu, He Qian
Format: Article
Language:English
Subjects:
Analog RRAM
Conductivity
Current measurement
Hafnium compounds
neuromorphic computing
Neuromorphics
Pulse measurements
Switches
synapse
Thermal conductivity
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creator Wei Wu
Huaqiang Wu
Bin Gao
Ning Deng
Shimeng Yu
He Qian
description Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfO x /TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.
doi_str_mv 10.1109/LED.2017.2719161
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fullrecord <record><control><sourceid>ieee</sourceid><recordid>TN_cdi_ieee_primary_7956170</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7956170</ieee_id><sourcerecordid>7956170</sourcerecordid><originalsourceid>FETCH-LOGICAL-c222t-35143d68e38c1db1419c0e865bf582e3780acfd0990851c497fd6231e1f8f4683</originalsourceid><addsrcrecordid>eNotjM1Kw0AYABdRsFbvgpd9gcT99n-PtUZbiBS00mPZbr5tVpq0JKHat1fR08AwDCG3wHIA5u7L4jHnDEzODTjQcEZGoJTNmNLinIyYkZAJYPqSXPX9B2MgpZEjspo3h25_TO2WTlq_22_p22caQv0rUktncfGVPfgeK_qKfeqHdET6gs2-O9FVGmrq6bLGrvE7WrS1b8NPWPoTdtfkIvpdjzf_HJP3p2I5nWXl4nk-nZRZ4JwPmVAgRaUtChug2oAEFxharTZRWY7CWOZDrJhzzCoI0plYaS4AIdootRVjcvf3TYi4PnSp8d1pbZzSYJj4Bt7GTx0</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Wei Wu ; Huaqiang Wu ; Bin Gao ; Ning Deng ; Shimeng Yu ; He Qian</creator><creatorcontrib>Wei Wu ; Huaqiang Wu ; Bin Gao ; Ning Deng ; Shimeng Yu ; He Qian</creatorcontrib><description>Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfO x /TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2017.2719161</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analog RRAM ; Conductivity ; Current measurement ; Hafnium compounds ; neuromorphic computing ; Neuromorphics ; Pulse measurements ; Switches ; synapse ; Thermal conductivity</subject><ispartof>IEEE electron device letters, 2017-08, Vol.38 (8), p.1019-1022</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c222t-35143d68e38c1db1419c0e865bf582e3780acfd0990851c497fd6231e1f8f4683</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7956170$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,54771</link.rule.ids></links><search><creatorcontrib>Wei Wu</creatorcontrib><creatorcontrib>Huaqiang Wu</creatorcontrib><creatorcontrib>Bin Gao</creatorcontrib><creatorcontrib>Ning Deng</creatorcontrib><creatorcontrib>Shimeng Yu</creatorcontrib><creatorcontrib>He Qian</creatorcontrib><title>Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfO x /TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.</description><subject>Analog RRAM</subject><subject>Conductivity</subject><subject>Current measurement</subject><subject>Hafnium compounds</subject><subject>neuromorphic computing</subject><subject>Neuromorphics</subject><subject>Pulse measurements</subject><subject>Switches</subject><subject>synapse</subject><subject>Thermal conductivity</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNotjM1Kw0AYABdRsFbvgpd9gcT99n-PtUZbiBS00mPZbr5tVpq0JKHat1fR08AwDCG3wHIA5u7L4jHnDEzODTjQcEZGoJTNmNLinIyYkZAJYPqSXPX9B2MgpZEjspo3h25_TO2WTlq_22_p22caQv0rUktncfGVPfgeK_qKfeqHdET6gs2-O9FVGmrq6bLGrvE7WrS1b8NPWPoTdtfkIvpdjzf_HJP3p2I5nWXl4nk-nZRZ4JwPmVAgRaUtChug2oAEFxharTZRWY7CWOZDrJhzzCoI0plYaS4AIdootRVjcvf3TYi4PnSp8d1pbZzSYJj4Bt7GTx0</recordid><startdate>201708</startdate><enddate>201708</enddate><creator>Wei Wu</creator><creator>Huaqiang Wu</creator><creator>Bin Gao</creator><creator>Ning Deng</creator><creator>Shimeng Yu</creator><creator>He Qian</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>201708</creationdate><title>Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer</title><author>Wei Wu ; Huaqiang Wu ; Bin Gao ; Ning Deng ; Shimeng Yu ; He Qian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c222t-35143d68e38c1db1419c0e865bf582e3780acfd0990851c497fd6231e1f8f4683</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Analog RRAM</topic><topic>Conductivity</topic><topic>Current measurement</topic><topic>Hafnium compounds</topic><topic>neuromorphic computing</topic><topic>Neuromorphics</topic><topic>Pulse measurements</topic><topic>Switches</topic><topic>synapse</topic><topic>Thermal conductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wei Wu</creatorcontrib><creatorcontrib>Huaqiang Wu</creatorcontrib><creatorcontrib>Bin Gao</creatorcontrib><creatorcontrib>Ning Deng</creatorcontrib><creatorcontrib>Shimeng Yu</creatorcontrib><creatorcontrib>He Qian</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wei Wu</au><au>Huaqiang Wu</au><au>Bin Gao</au><au>Ning Deng</au><au>Shimeng Yu</au><au>He Qian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2017-08</date><risdate>2017</risdate><volume>38</volume><issue>8</issue><spage>1019</spage><epage>1022</epage><pages>1019-1022</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Analog RRAM with hundreds of resistance levels is an attractive device for neuromorphic computing. However, it is still very challenging to realize good analog behavior in filamentary RRAM cells. In this letter, we developed a novel methodology to improve the analog switching in filamentary RRAM. The impact of local temperature on analog switching behavior is elucidated. The transition from abrupt switching to analog switching is found at higher temperature. Based on this result, a thermal enhanced layer (TEL) is proposed to confine heat in switching layer for realizing analog RRAM. The HfO x /TEL RRAM shows analog switching characteristics with more than ten times window using 50-ns pulses. Finally, a 1-kb analog RRAM array is demonstrated with uniform analog switching, fast speed, excellent resistance window, and excellent retention properties.</abstract><pub>IEEE</pub><doi>10.1109/LED.2017.2719161</doi><tpages>4</tpages></addata></record>
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subjects Analog RRAM
Conductivity
Current measurement
Hafnium compounds
neuromorphic computing
Neuromorphics
Pulse measurements
Switches
synapse
Thermal conductivity
title Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-23T20%3A14%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improving%20Analog%20Switching%20in%20HfOx-Based%20Resistive%20Memory%20With%20a%20Thermal%20Enhanced%20Layer&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Wei%20Wu&rft.date=2017-08&rft.volume=38&rft.issue=8&rft.spage=1019&rft.epage=1022&rft.pages=1019-1022&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2017.2719161&rft_dat=%3Cieee%3E7956170%3C/ieee%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c222t-35143d68e38c1db1419c0e865bf582e3780acfd0990851c497fd6231e1f8f4683%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7956170&rfr_iscdi=true