Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion applications. In order to realize converter circuit control function and overcurrent protection of device itself, we have designed, fabricate...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-08, Vol.64 (8), p.3515-3518
Main Authors: Ruize Sun, Liang, Yung C., Yee-Chia Yeo, Cezhou Zhao
Format: Article
Language:English
Subjects:
AlGaN/GaN metal–insulator–semiconductor high electronmobility transistor (MIS-HEMT)
Aluminum gallium nitride
Current measurement
embedded current sensor
high-temperature operation
Logic gates
power converter control
Sensors
Transient analysis
Voltage measurement
Wide band gap semiconductors
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Summary:AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have become a promising candidate for use in efficient power conversion applications. In order to realize converter circuit control function and overcurrent protection of device itself, we have designed, fabricated, and experimentally-measured the Au-free AlGaN/GaN MIS-HEMTs with embedded current sensing structure. A floating ohmic current sensing electrode is inserted between source and gate electrode of which the sensing voltage signal can represent the drain current. We have achieved stable current sensing ratios at various operating conditions including quasi-static, transient state, and under high temperature. The proposed structure is highly useful in monolithic power integrated circuit on CMOS-compatible AlGaN/GaN technologies.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2717934