Back Enhanced (BE) SOI MOSFET under non-conventional bias conditions

The aim of this work is to investigate the working principle of the new Back Enhanced (BE) SOI MOSFET, under non-conventional bias conditions. This planar BE SOI device with undoped source/drain/channel structure presents the advantage to have very simple fabrication process (without any implantatio...

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Bibliographic Details
Main Authors: Yojo, L. S., Rangel, R. C., Sasaki, K. R. A., Martino, J. A.
Format: Conference Proceeding
Language:English
Subjects:
BE SOI
different device architectures
Electrodes
Energy barrier
Logic gates
MOSFET
MOSFET circuits
Threshold voltage
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Summary:The aim of this work is to investigate the working principle of the new Back Enhanced (BE) SOI MOSFET, under non-conventional bias conditions. This planar BE SOI device with undoped source/drain/channel structure presents the advantage to have very simple fabrication process (without any implantation and electron beam lithography) and can act like a p- or n-type MOS, depending on the back-gate bias condition. Under non-conventional bias condition, many electrical parameters present different behavior. The threshold voltage increases linearly with the drain to source voltage (V DS ) if V DS > 0 and it is constant if V DS 0 in case of a n-type BE SOI MOSFET. This fact is explained through experimental and simulated data.
ISSN:2472-9132
DOI:10.1109/ULIS.2017.7962562