A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs

The complete general solution of nonlinear 1-D undoped Poisson's equation, in both Cartesian and cylindrical coordinates, is derived by employing a special variable transformation method. A general model platform for various types of emerging multi-gate MOSFETs is further constructed and verifi...

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Bibliographic Details
Published in:IEEE electron device letters 2017-08, Vol.38 (8), p.1015-1018
Main Authors: Chuyang Hong, Jun Zhou, Jiasheng Huang, Rui Wang, Wenlong Bai, Kuo, James B., Yijian Chen
Format: Article
Language:English
Subjects:
Boundary conditions
Cartesian coordinates
Computer simulation
Cylindrical coordinates
Gallium arsenide
general solution
Logic gates
Mathematical model
MOSFET
MOSFETs
multi-gate devices
Nanoscale devices
Nanowires
Poisson’s equation
Semiconductor device modeling
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Summary:The complete general solution of nonlinear 1-D undoped Poisson's equation, in both Cartesian and cylindrical coordinates, is derived by employing a special variable transformation method. A general model platform for various types of emerging multi-gate MOSFETs is further constructed and verified with TCAD simulations. It is shown that this model platform is suitable for analyzing a series of emerging devices, such as double-surrounding-gate, inner-surrounding-gate, and outer-surrounding-gate nanoshell MOSFETs, all of which require different boundary conditions from the conventional gate-all-around nanowire device.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2722227