Tungsten corrosion and recess improvement by feasible slurry and clean chemical in WCMP process

Serious tungsten corrosion after tungsten chemical mechanical planarization (W CMP) is found to correlate to the high via resistance. According to via design layout analysis, the W plug recess is strongly dependent on the underlying metal line area and via hole size. The via W plug recess becomes wo...

Full description

Saved in:
Bibliographic Details
Main Authors: Kuang-Wei Chen, Chun-Fu Chen, Yung-Tai Hung, Tuung Luoh, Ling-Wuu Yang, Tahone Yang, Kuang-Chao Chen
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
clean chemical
Corrosion
layout design
oxide buffing
Plugs
Resistance
Slurries
Tungsten
via plug recess
via resistance
W CMP
W slurry
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Serious tungsten corrosion after tungsten chemical mechanical planarization (W CMP) is found to correlate to the high via resistance. According to via design layout analysis, the W plug recess is strongly dependent on the underlying metal line area and via hole size. The via W plug recess becomes worse as via size shrinkage and underlying metal line area increasing. The low corrosion W polishing slurry, alkali /acidic buffing slurry and clean chemical are studied. The result indicates that low corrosion W slurry and acidic clean chemical can suppress tungsten corrosion and result in tightened via resistance distribution in 1× nm device product.
ISSN:2380-6338
DOI:10.1109/IITC-AMC.2017.7968980