A 32 GHz 20 dBm-PSAT transformer-based Doherty power amplifier for multi-Gb/s 5G applications in 28 nm bulk CMOS

This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm bulk CMOS process. There are two techniques proposed: linearization by means of AM-PM and AM-AM compensation of the class AB and the class C amplifiers; and parallel-series-parallel power power combiner, wherein a...

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Bibliographic Details
Main Authors: Indirayanti, Paramartha, Reynaert, Patrick
Format: Conference Proceeding
Language:English
Subjects:
5G mobile communication
AM-PM distortion
Bandwidth
Circuit faults
CMOS
Distortion
Doherty power amplifier
Gain
Impedance
Power generation
transformer power combiner
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Summary:This paper presents a 32 GHz transformer-based Doherty power amplifier (PA) in a 28 nm bulk CMOS process. There are two techniques proposed: linearization by means of AM-PM and AM-AM compensation of the class AB and the class C amplifiers; and parallel-series-parallel power power combiner, wherein a current-mode parallel combiner complements the Doherty's voltage-mode series combiner to boost the output power. A saturated output power (P SAT ) of 19.8 dBm and an OP1dB of 16 dBm are accomplished from 1V supply while supporting 15 Gb/s 64-QAM amplification at 11.7 dBm average output power. The chip achieves 21% PAE at P SAT and occupies 0.59 mm 2 active area.
ISSN:2375-0995
DOI:10.1109/RFIC.2017.7969013