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A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS

A 32Gb/s-NRZ, 15GBaud/s-PAM4 configurable DFB Laser Diode Driver (LDD) is presented in standard 65nm CMOS. The driver employs a balanced-input, single-ended-output topology to deliver large current output, and integrates a tunable pre-emphasis to extend the bandwidth. An on-chip active back-terminat...

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Main Authors:	Bozhi Yin, Nan Qi, Jingbo Shi, Xi Xiao, Daigao Chen, Miaofeng Li, Zhiyong Li, Jiangbing Du, Zuyuan He, Rui Bai, Yi Wang, Jun Zheng, Chang, Fred, Huanlin Zhang, Chiang, Patrick Yin
Format:	Conference Proceeding
Language:	English
Subjects:	Bandwidth CMOS process Diode lasers Impedance impedance matching LD driver Modulation optical transmitter Optical transmitters Optical variables measurement Reflection
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creator	Bozhi Yin Nan Qi Jingbo Shi Xi Xiao Daigao Chen Miaofeng Li Zhiyong Li Jiangbing Du Zuyuan He Rui Bai Yi Wang Jun Zheng Chang, Fred Huanlin Zhang Chiang, Patrick Yin
description	A 32Gb/s-NRZ, 15GBaud/s-PAM4 configurable DFB Laser Diode Driver (LDD) is presented in standard 65nm CMOS. The driver employs a balanced-input, single-ended-output topology to deliver large current output, and integrates a tunable pre-emphasis to extend the bandwidth. An on-chip active back-termination (ABT) is proposed which absorbs loading reflections without sacrificing the effective modulation current. Directly wire-bonded to a DFB laser chip, the measurement results show 25.78Gb/s NRZ optical eye-diagram with 4dB Extinction Ratio (ER) and a 19.3% eye-mask margin referred to the 100G specification. The LDD delivers 60mA bias and 60mApp modulation current, consuming only 550mW power consumption.
doi_str_mv	10.1109/RFIC.2017.7969068
format	conference_proceeding
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source	IEEE Xplore All Conference Series
subjects	Bandwidth CMOS process Diode lasers Impedance impedance matching LD driver Modulation optical transmitter Optical transmitters Optical variables measurement Reflection
title	A 32Gb/s-NRZ, 15GBaud/s-PAM4 DFB laser driver with active back-termination in 65nm CMOS
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