Photoluminescence for in-line buried defects detection in silicon devices

In this work, a novel imaging photoluminescence-based metrology method is introduced, with potential application to buried defect detection in silicon devices during semiconductor manufacturing process. The theoretical and practical aspects are both discussed. A new metrology tool was realized and t...

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Bibliographic Details
Main Authors: Duru, Romain, Le-Cunff, Delphine, Cannac, Maxime, Laurent, Nicolas, Dudas, Laszlo, Kiss, Zoltan, Cseh, David, Lajtos, Imre, Jay, Frederic, Nadudvari, Gyorgy
Format: Conference Proceeding
Language:English
Subjects:
buried defects
dislocations
Etching
non-visual defects
Optical filters
Optical imaging
Optical sensors
Photoluminescence
Silicon
Online Access:Request full text
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Description
Summary:In this work, a novel imaging photoluminescence-based metrology method is introduced, with potential application to buried defect detection in silicon devices during semiconductor manufacturing process. The theoretical and practical aspects are both discussed. A new metrology tool was realized and thoroughly tested through real-life semiconductor samples to reveal the capabilities of the suggested method. According to the results, defects down to the sub-micron size range can be optically detected, as confirmed by cross-sectional transmission electron microscopy images.
ISSN:2376-6697
DOI:10.1109/ASMC.2017.7969241