Enabling low temperature metal nitride ALD using ultra-high purity hydrazine: ET/ID: Enabling technologies and innovative devices

A novel hydrazine vaporization source has been developed in response to the emerging need for sub-400°C metal nitride deposition. Hydrazine has been demonstrated to be a viable precursor to enable low temperature atomic layer deposition (ALD). Initial results indicate that purification leads to TiN...

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Bibliographic Details
Main Authors: Alvarez, Dan, Spiegelman, Jeffrey, Andachi, Keisuke, Holmes, Russell, Raynor, Mark, Shimizu, Hank
Format: Conference Proceeding
Language:English
Subjects:
Atomic layer deposition
chemical delivery
gas phase hydrazine
Hydrazine
hydrazine delivery
hydrazine source
Liquids
Low Temperature Metal Nitride Deposition
Manufacturing
membrane vaporizer
Metals
Plasma temperature
Silicon Nitride
Solvents
Titanium Nitride
ultra-high purity
water-free
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Description
Summary:A novel hydrazine vaporization source has been developed in response to the emerging need for sub-400°C metal nitride deposition. Hydrazine has been demonstrated to be a viable precursor to enable low temperature atomic layer deposition (ALD). Initial results indicate that purification leads to TiN x films without added oxygen.
ISSN:2376-6697
DOI:10.1109/ASMC.2017.7969274