Investigations on elimination of plasma-induced Si substrate damage for 3D NAND fabrication: AEPM: Advanced equipment processes and materials

This paper presents the methods of eliminating the plasma-induced Si substrate damage in periphery regions, resulting from high aspect ratio etching process for 3D NAND fabrication. The impact of Si substrate damage is verified by the low and high bias power experiments. The result indicates more Si...

Full description

Saved in:
Bibliographic Details
Main Authors: Lin, Chih-Yao, Lo, Chieh, Chen, Wei-Chen, Yang, Zusing, Chang, Sheng-Yuan, Lee, Hong-Ji, Lian, Nan-Tzu, Yang, Ta-Hone, Chen, Kuang-Chao, Lu, Chih-Yuan
Format: Conference Proceeding
Language:English
Subjects:
damaged-layer
Etching
high bias power
Implants
low bias power
Plasma-induced Si substrate damage
Plasmas
Silicon
Substrates
surface layer removal process
Three-dimensional displays
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents the methods of eliminating the plasma-induced Si substrate damage in periphery regions, resulting from high aspect ratio etching process for 3D NAND fabrication. The impact of Si substrate damage is verified by the low and high bias power experiments. The result indicates more Si damage is present with high energy bombardment; therefore, high bias power is recommended to be inhibited unless necessary. The elimination of Si substrate damage is also confirmed with surface layer removal process. The damaged-layer is removed by Si recess procedure, and a healthy Si substrate can be obtained.
ISSN:2376-6697
DOI:10.1109/ASMC.2017.7969275