Effects of sulfur concentration on structural, optical and electrical properties of Tin Oxide thin films deposited by spray pyrolysis technique

Thin films of Tin oxide doped with deferent concentration of Sulfur were prepared on glass substrates at 400 °C by spray pyrolysis technique. The thin films were characterized to study their physical properties. Effects of Sulfur concentration on structural, optical and electrical properties of tran...

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Main Authors: El Hat, Abderrahim, Rouchdi, Mustapha, Hadri, Adil, Nassiri, Chourouk, Chafi, Fatima Zahra, Fares, Boubker, Laanab, Larbi, Hassanain, Najem, Labrim, Hicham, Mzerd, Ahmed
Format: Conference Proceeding
Language:English
Subjects:
Band gap
Doping
Hall Effect
Lattices
Optical films
Photonic band gap
SnO 2
Spray Pyrolysis
Sulfur
X-ray scattering
XRD
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Summary:Thin films of Tin oxide doped with deferent concentration of Sulfur were prepared on glass substrates at 400 °C by spray pyrolysis technique. The thin films were characterized to study their physical properties. Effects of Sulfur concentration on structural, optical and electrical properties of transparent Tin Oxide thin films were investigated in the Sulfur content range (0-10) at%. It was observed from X-ray diffraction patterns (XRD) that the films have a polycrystalline structure and the intensity of the peaks depends on the doping content. No diffraction peak related to dopants in XRD patterns along with a shift in peaks angles to SnO 2 proved that S ions were doped into SnO 2 thin films and the size of the grains has been changed from 3.7 to 4.1 nm. The optical gap of Sn 1-x S x O 2 thin films was determined to be about 2.58 to 3.63 eV. From the Hall Effect measurements, the minimum resistivity 6.34×10 -2 (Ω.cm) was obtained from S-doped SnO 2 (5 at. %).
ISSN:2380-7393
DOI:10.1109/IRSEC.2016.7983875