Highly reliable GaN MOS-HFET with high short-circuit capability

A new MOS-HFET structure of a GaN power device for highly reliable GaN MOS gates has been designed. A normally-on JFET structure is fabricated between the gate and drain of the GaN MOS-HFET. By using this technology, the reliability of the gate insulator is greatly improved under the high drain volt...

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Bibliographic Details
Main Authors: Youngshin Eum, Oyama, Kazuhiro, Otake, Nobuyuki, Hoshi, Shinichi
Format: Conference Proceeding
Language:English
Subjects:
GaN MOS-HFET
GaN power device
Normally-off recessed gate
Normally-on JFET
Reliability
Saturation current reduction
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Summary:A new MOS-HFET structure of a GaN power device for highly reliable GaN MOS gates has been designed. A normally-on JFET structure is fabricated between the gate and drain of the GaN MOS-HFET. By using this technology, the reliability of the gate insulator is greatly improved under the high drain voltage of the blocking-state. The new GaN MOS-HFET also reduces saturation current in the short-circuit condition by about 30%. It is expected that this new device improves the tolerance characteristics in the short-circuit condition without the on-resistance penalty associated with conventional structures.
ISSN:1946-0201
DOI:10.23919/ISPSD.2017.7988921