A novel high-voltage LDMOS with shielding-contact structure for HCl SOA enhancement

This paper demonstrated a novel LDMOS with gate-connected shielding-contact structure, no extra mask or process is needed. TCAD simulation reveals lower electrical potential and impact ionization with the proposed structure. Ron-sp/BVD ratio reduction and significant HCl SOA improvement have been ve...

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Bibliographic Details
Main Authors: Hsin-Liang Liu, Ze-Wei Jhou, Shih-Teng Huang, Shu-Wen Lin, Ke-Feng Lin, Chiu-Te Lee, Chih-Chong Wang
Format: Conference Proceeding
Language:English
Subjects:
HCl
LDMOS
shielding-contact
SOA
Online Access:Request full text
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Summary:This paper demonstrated a novel LDMOS with gate-connected shielding-contact structure, no extra mask or process is needed. TCAD simulation reveals lower electrical potential and impact ionization with the proposed structure. Ron-sp/BVD ratio reduction and significant HCl SOA improvement have been verified on real Silicon. Newly layout with Slot-Poly design has been investigated for better process control as well.
ISSN:1946-0201
DOI:10.23919/ISPSD.2017.7988966