Impact-ionization in silicon at large operating temperature

In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HAR...

Full description

Saved in:
Bibliographic Details
Main Authors: Valdinoci, M., Ventura, D., Vecchi, M.C., Rudan, M., Baccarani, G., Illien, F., Stricker, A., Zullino, L.
Format: Conference Proceeding
Language:English
Subjects:
Acoustic scattering
Charge carrier processes
Data mining
Electrons
Ionization
Optical scattering
Predictive models
Silicon
Temperature dependence
Temperature distribution
Citations: Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c681-cc4fba0cf53c100a73261f616cc9db8c2271e26998b479387170106a8ed8928c3
cites
container_end_page 30
container_issue
container_start_page 27
container_title
container_volume
creator Valdinoci, M.
Ventura, D.
Vecchi, M.C.
Rudan, M.
Baccarani, G.
Illien, F.
Stricker, A.
Zullino, L.
description In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HARM and the available experimental data in the above temperature range. The new model has been validated by simulating the reverse characteristics of junction diodes, and turns out to correctly predict the temperature dependence of breakdown voltage.
doi_str_mv 10.1109/SISPAD.1999.799251
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_799251</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>799251</ieee_id><sourcerecordid>799251</sourcerecordid><originalsourceid>FETCH-LOGICAL-c681-cc4fba0cf53c100a73261f616cc9db8c2271e26998b479387170106a8ed8928c3</originalsourceid><addsrcrecordid>eNotj81qwzAQhAWl0DbNC-SkF7CrlWxpl55C-mcItJDcg7yRg4rtGNk9tE9f03Qu3wcDAyPEClQOoOhhV-0-1k85EFHuiHQJV-KuIKMQDKG6Ectx_FRzDNkSza14rLrB85TFcx9__DRDxl6OsY08q59k69MpyPMQ0tz2JzmF7s-_UrgX141vx7D850LsX573m7ds-_5abdbbjC1Cxlw0tVfclIZBKe-MttBYsMx0rJG1dhC0JcK6cGTQgVOgrMdwRNLIZiFWl9kYQjgMKXY-fR8u78wvW9FFkA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Impact-ionization in silicon at large operating temperature</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Valdinoci, M. ; Ventura, D. ; Vecchi, M.C. ; Rudan, M. ; Baccarani, G. ; Illien, F. ; Stricker, A. ; Zullino, L.</creator><creatorcontrib>Valdinoci, M. ; Ventura, D. ; Vecchi, M.C. ; Rudan, M. ; Baccarani, G. ; Illien, F. ; Stricker, A. ; Zullino, L.</creatorcontrib><description>In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HARM and the available experimental data in the above temperature range. The new model has been validated by simulating the reverse characteristics of junction diodes, and turns out to correctly predict the temperature dependence of breakdown voltage.</description><identifier>ISBN: 4930813980</identifier><identifier>ISBN: 9784930813985</identifier><identifier>DOI: 10.1109/SISPAD.1999.799251</identifier><language>eng</language><publisher>IEEE</publisher><subject>Acoustic scattering ; Charge carrier processes ; Data mining ; Electrons ; Ionization ; Optical scattering ; Predictive models ; Silicon ; Temperature dependence ; Temperature distribution</subject><ispartof>1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387), 1999, p.27-30</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c681-cc4fba0cf53c100a73261f616cc9db8c2271e26998b479387170106a8ed8928c3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/799251$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/799251$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Valdinoci, M.</creatorcontrib><creatorcontrib>Ventura, D.</creatorcontrib><creatorcontrib>Vecchi, M.C.</creatorcontrib><creatorcontrib>Rudan, M.</creatorcontrib><creatorcontrib>Baccarani, G.</creatorcontrib><creatorcontrib>Illien, F.</creatorcontrib><creatorcontrib>Stricker, A.</creatorcontrib><creatorcontrib>Zullino, L.</creatorcontrib><title>Impact-ionization in silicon at large operating temperature</title><title>1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)</title><addtitle>SISPAD</addtitle><description>In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HARM and the available experimental data in the above temperature range. The new model has been validated by simulating the reverse characteristics of junction diodes, and turns out to correctly predict the temperature dependence of breakdown voltage.</description><subject>Acoustic scattering</subject><subject>Charge carrier processes</subject><subject>Data mining</subject><subject>Electrons</subject><subject>Ionization</subject><subject>Optical scattering</subject><subject>Predictive models</subject><subject>Silicon</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><isbn>4930813980</isbn><isbn>9784930813985</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNotj81qwzAQhAWl0DbNC-SkF7CrlWxpl55C-mcItJDcg7yRg4rtGNk9tE9f03Qu3wcDAyPEClQOoOhhV-0-1k85EFHuiHQJV-KuIKMQDKG6Ectx_FRzDNkSza14rLrB85TFcx9__DRDxl6OsY08q59k69MpyPMQ0tz2JzmF7s-_UrgX141vx7D850LsX573m7ds-_5abdbbjC1Cxlw0tVfclIZBKe-MttBYsMx0rJG1dhC0JcK6cGTQgVOgrMdwRNLIZiFWl9kYQjgMKXY-fR8u78wvW9FFkA</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Valdinoci, M.</creator><creator>Ventura, D.</creator><creator>Vecchi, M.C.</creator><creator>Rudan, M.</creator><creator>Baccarani, G.</creator><creator>Illien, F.</creator><creator>Stricker, A.</creator><creator>Zullino, L.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1999</creationdate><title>Impact-ionization in silicon at large operating temperature</title><author>Valdinoci, M. ; Ventura, D. ; Vecchi, M.C. ; Rudan, M. ; Baccarani, G. ; Illien, F. ; Stricker, A. ; Zullino, L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c681-cc4fba0cf53c100a73261f616cc9db8c2271e26998b479387170106a8ed8928c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Acoustic scattering</topic><topic>Charge carrier processes</topic><topic>Data mining</topic><topic>Electrons</topic><topic>Ionization</topic><topic>Optical scattering</topic><topic>Predictive models</topic><topic>Silicon</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><toplevel>online_resources</toplevel><creatorcontrib>Valdinoci, M.</creatorcontrib><creatorcontrib>Ventura, D.</creatorcontrib><creatorcontrib>Vecchi, M.C.</creatorcontrib><creatorcontrib>Rudan, M.</creatorcontrib><creatorcontrib>Baccarani, G.</creatorcontrib><creatorcontrib>Illien, F.</creatorcontrib><creatorcontrib>Stricker, A.</creatorcontrib><creatorcontrib>Zullino, L.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Valdinoci, M.</au><au>Ventura, D.</au><au>Vecchi, M.C.</au><au>Rudan, M.</au><au>Baccarani, G.</au><au>Illien, F.</au><au>Stricker, A.</au><au>Zullino, L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Impact-ionization in silicon at large operating temperature</atitle><btitle>1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387)</btitle><stitle>SISPAD</stitle><date>1999</date><risdate>1999</risdate><spage>27</spage><epage>30</epage><pages>27-30</pages><isbn>4930813980</isbn><isbn>9784930813985</isbn><abstract>In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400/spl deg/C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HARM and the available experimental data in the above temperature range. The new model has been validated by simulating the reverse characteristics of junction diodes, and turns out to correctly predict the temperature dependence of breakdown voltage.</abstract><pub>IEEE</pub><doi>10.1109/SISPAD.1999.799251</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 4930813980
ispartof 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387), 1999, p.27-30
issn
language eng
recordid cdi_ieee_primary_799251
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Acoustic scattering
Charge carrier processes
Data mining
Electrons
Ionization
Optical scattering
Predictive models
Silicon
Temperature dependence
Temperature distribution
title Impact-ionization in silicon at large operating temperature
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T09%3A42%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Impact-ionization%20in%20silicon%20at%20large%20operating%20temperature&rft.btitle=1999%20International%20Conference%20on%20Simulation%20of%20Semiconductor%20Processes%20and%20Devices.%20SISPAD'99%20(IEEE%20Cat.%20No.99TH8387)&rft.au=Valdinoci,%20M.&rft.date=1999&rft.spage=27&rft.epage=30&rft.pages=27-30&rft.isbn=4930813980&rft.isbn_list=9784930813985&rft_id=info:doi/10.1109/SISPAD.1999.799251&rft_dat=%3Cieee_6IE%3E799251%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c681-cc4fba0cf53c100a73261f616cc9db8c2271e26998b479387170106a8ed8928c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=799251&rfr_iscdi=true