Linking three-dimensional topography simulation with high pressure CVD reaction kinetics

We present a three-dimensional model for the simulation of continuum transport and reaction determined high pressure CVD processes. Our approach allows simulations over arbitrary geometries such as structures resulting from nonuniform underlying PVD films. This enables the examination of film profil...

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Bibliographic Details
Main Authors: Pyka, W., Fleischmann, P., Haindl, B., Selberherr, S.
Format: Conference Proceeding
Language:English
Subjects:
Chemistry
Geometry
Joining processes
Kinetic theory
Mesh generation
Object oriented modeling
Semiconductor device modeling
Solid modeling
Steady-state
Surface topography
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Summary:We present a three-dimensional model for the simulation of continuum transport and reaction determined high pressure CVD processes. Our approach allows simulations over arbitrary geometries such as structures resulting from nonuniform underlying PVD films. This enables the examination of film profile variations across the wafer for multi-step processes consisting of low and high pressure parts such as Ti/TiN/W plug-fills. Additionally the model allows a very flexible formulation of the involved chemistry and can easily be extended to arbitrary CVD processes including gas phase reactions of precursors as observed in the deposition of silicon dioxide from tetraethylorthosilicate (TEOS).
DOI:10.1109/SISPAD.1999.799295