A Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO Film

A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was proved to be crystallized with a mixture of m...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2017-09, Vol.5 (5), p.378-383
Main Authors: Li, Yuxing, Liang, Renrong, Wang, Jiabin, Zhang, Ying, Tian, He, Liu, Houfang, Li, Songlin, Mao, Weiquan, Pang, Yu, Li, Yutao, Yang, Yi, Ren, Tian-Ling
Format: Article
Language:English
Subjects:
Annealing
annealing free
Capacitance
Electrodes
Ferroelectric thin film transistor
HfZrO
Hysteresis
Logic gates
Thin film transistors
Tin
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Summary:A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was proved to be crystallized with a mixture of monoclinic, tetragonal, and orthorhombic phases and showed ferroelectricity naturally. Thus, high temperature annealing process was avoided. The transfer characteristic of this Fe-TFT was demonstrated with operating voltage that was smaller than 3 V, memory window about 1 V, and small subthreshold slope (SS) about 82 mV/dec. The charge trapping phenomenon in this device was explored by characterizing the transfer curves with different ranges of gate voltages. This HfZrO-based device with low processing thermal budget and small SS has high potential for Fe-TFT memory which can be used in oxide semiconductor-based systems and applications.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2017.2732166