A 0.2-/spl mu/m, 1.8-V, SOI, 550-MHZ, 64-b PowerPC microprocessor with copper interconnects

A 550-MHz 64-b PowerPC processor in 0.2-um silicon-on-insulator (SOI) copper technology achieves a 22% frequency gain over a similar design in a CMOS bulk technology. Performance gains are 15%-40% at the circuit level, 24%-28%, for critical paths. Unique SOI design aspects such as history effect, lo...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1999-11, Vol.34 (11), p.1430-1435
Main Authors: Aipperspach, A.G., Allen, D.H., Cox, D.T., Phan, N.V., Storino, S.N.
Format: Article
Language:English
Subjects:
Clocks
CMOS technology
Copper
Delay
Frequency
Integrated circuit technology
Microprocessors
Silicon on insulator technology
Voltage
Wiring
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Summary:A 550-MHz 64-b PowerPC processor in 0.2-um silicon-on-insulator (SOI) copper technology achieves a 22% frequency gain over a similar design in a CMOS bulk technology. Performance gains are 15%-40% at the circuit level, 24%-28%, for critical paths. Unique SOI design aspects such as history effect, lowered noise margins, parasitic bipolar current, and self-heating are considered.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.799846