High linearity K-band InP HBT power amplifier MMIC with 62.8% PAE at 21 GHz

We report the first InP HBT MMIC power amplifier chip results at K-band. A 21 GHz fully monolithic 2 mil InP HBT power MMIC which achieves 62.8% PAE with 10 dB gain and 20 dBm output power. A higher power MMIC at 18.5 GHz achieved 25 dBm output power with 40% PAE at 1 dB compression under class AB o...

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Bibliographic Details
Main Authors: Yang, L.W., Kobayashi, K.W., Steit, D.C., Oki, A.K., Yen, H.C., Grossman, P.C., Block, T.R., Tran, L.T., Gutierrez-Aitken, A., Callejo, L.G., Macek, J., Maas, S.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Gain
Heterojunction bipolar transistors
High power amplifiers
Indium phosphide
K-band
Linearity
MMICs
Power amplifiers
Power generation
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Summary:We report the first InP HBT MMIC power amplifier chip results at K-band. A 21 GHz fully monolithic 2 mil InP HBT power MMIC which achieves 62.8% PAE with 10 dB gain and 20 dBm output power. A higher power MMIC at 18.5 GHz achieved 25 dBm output power with 40% PAE at 1 dB compression under class AB operation with no noticeable gain expansion. The MMIC has low distortion with 3/sup rd/ order IM suppression C/I of -30.2 dBc and 5th order suppression C/I of -50.8 dBc at a combined output power of 19.3 dBm. Both amplifiers were operated under low DC power with a conservative peak current densities of
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1999.803730