High power and gain at 35 GHz utilizing an InAlGaAs-In/sub 0.32/Ga/sub 0.68/As metamorphic HEMT

Low on-state breakdown voltage has limited the metamorphic HEMT's power by restricting drain voltages to less than or equal to 3.5 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs (32% In channel) which allow operation at V/sub ds/=6 V, resulting in...

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Bibliographic Details
Main Authors: Whelan, C.S., Hoke, W.E., McTaggart, R.A., Lyman, P.S., Marsh, P.F., Lichwala, S.J., Kazior, T.E.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Gain
Gallium arsenide
HEMTs
Indium
mHEMTs
PHEMTs
Power generation
Radio frequency
Testing
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Summary:Low on-state breakdown voltage has limited the metamorphic HEMT's power by restricting drain voltages to less than or equal to 3.5 V. We have overcome this limitation and demonstrated high breakdown voltage metamorphic HEMTs (32% In channel) which allow operation at V/sub ds/=6 V, resulting in a power density of 650 mW/mm at 35 GHz.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.1999.803764