Resistive Switching Characteristics of Flexible TiO2 Thin Film Fabricated by Deep Ultraviolet Photochemical Solution Method

A novel ultraviolet photochemical method was used to prepare TiO 2 resistive-switching films. Amorphous TiO 2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO 2 /ITO/PET device was then fabrica...

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Bibliographic Details
Published in:IEEE electron device letters 2017-11, Vol.38 (11), p.1528-1531
Main Authors: Yuanqing Chen, Lingwei Li, Xiaoru Yin, Yerramilli, Aditya, Yuxia Shen, Yang Song, Weibai Bian, Na Li, Zhao Zhao, Wenwen Qu, Theodore, N. David, Alford, T. L.
Format: Article
Language:English
Subjects:
deep ultraviolet irradiation
Performance evaluation
Radiation effects
Resistance
resistive switching
Switches
Switching circuits
Temperature
Titanium oxide
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Summary:A novel ultraviolet photochemical method was used to prepare TiO 2 resistive-switching films. Amorphous TiO 2 films were formed on flexible indium-tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by deep ultraviolet irradiation at 150 °C. A Pt/TiO 2 /ITO/PET device was then fabricated to investigate bipolar resistive switching of the films for potential application in non-volatile memories. The ratio of on-state to off-state currents was measured, and a good value of 1000 was obtained. The retention and switch-cycling characteristics of the device were investigated for different bending radii. The resistive switching behavior of the flexible device remained stable after 600 cycles of electrical switching and 1000 cycles of bending.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2756444