A Resistor-Based Temperature Sensor With a 0.13 pJ \cdot K2 Resolution FoM

• Published in: IEEE journal of solid-state circuits 2018-01, Vol.53 (1), p.164-173
• Main Authors: Sining Pan, Yanquan Luo, Shalmany, Saleh Heidary, Makinwa, Kofi A. A.
• Format: Article
• Language: English
• Subjects: Calibration; CMOS; CMOS process; CMOS temperature sensor; continuous-time phase-domain delta-sigma modulator (PDΔΣM); Digitization; energy efficiency; Energy resolution; Intermetallic compounds; resistor-based sensor; Resistors; Sensors; Signal resolution; Silicides; Temperature compensation; Temperature dependence; Temperature sensors; Thermistors
• ISSN: 0018-9200; 1558-173X
• DOI: 10.1109/JSSC.2017.2746671

This paper describes a high-resolution energy-efficient CMOS temperature sensor, intended for the temperature compensation of MEMS/quartz frequency references. The sensor is based on silicided poly-silicon thermistors, which are embedded in a Wien-bridge RC filter. When driven at a fixed frequency, the filter exhibits a temperature-dependent phase shift, which is digitized by an energy-efficient continuous-time phase-domain delta-sigma modulator. Implemented in a 0.18-μm CMOS technology, the sensor draws 87 μA from a 1.8 V supply and achieves a resolution of 410 μK rms in a 5-ms conversion time. This translates into a state-of-the-art resolution figure-of-merit of 0.13 pJ · K 2 . When packaged in ceramic, the sensor achieves an inaccuracy of 0.2 °C (3σ) from -40 °C to 85 °C after a singlepoint calibration and a correction for systematic nonlinearity. This can be reduced to ±0.03 °C (3σ) after a first-order fit. In addition, the sensor exhibits low 1/f noise and packaging shift.