A Low Turn-Off Loss 4H-SiC Trench IGBT With Schottky Contact in the Collector Side

In this paper, a 4H-SiC trench insulated gate bipolar transistor (IGBT) incorporating a Schottky contact in the collector side is proposed to reduce the turn-off energy loss. The proposed structure is explored and compared with the conventional IGBT using ATLAS. The simulation results have indicated...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2017-11, Vol.64 (11), p.4575-4580
Main Authors: Liu, Yan-Juan, Wang, Ying, Hao, Yue, Fang, Jun-Peng, Shan, Chan, Cao, Fei
Format: Article
Language:English
Subjects:
4H-SiC
Doping
Electrodes
Energy loss
Insulated gate bipolar transistors
Logic gates
Performance evaluation
Schottky barriers
trench insulated gate bipolar transistor (IGBT)
turn-off energy loss
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Summary:In this paper, a 4H-SiC trench insulated gate bipolar transistor (IGBT) incorporating a Schottky contact in the collector side is proposed to reduce the turn-off energy loss. The proposed structure is explored and compared with the conventional IGBT using ATLAS. The simulation results have indicated that the reduction in turn-off energy loss is more than 88%, with a slight degradation in the I-V characteristics. Concurrently, with the same on-state voltage drop, the turn-off loss is reduced by a figure of 84%.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2755719