A novel emitter-sharpened double-gate race-track-shaped field emitter structure

In this paper, a new emitter-sharpened double-gate race-track-shaped field emitter structure is reported. The race-track-shaped edge emission with double-gate control is used to provide high uniformity FEAs over a large area without the need of expensive submicron technology. In order to minimize th...

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Bibliographic Details
Published in:IEEE electron device letters 1999-12, Vol.20 (12), p.621-623
Main Authors: Baoping Wang, Zhongping Huang, Sin, J.K.O., Poon, V.M.C., Yongming Tang, Chen Wang, Kunxing Xue, Linsu Tong
Format: Article
Language:English
Subjects:
Anodes
Costs
Current density
Devices
Displays
Electric potential
Emittance
Emitters (electron)
Finite element method
Gates
High power amplifiers
Microelectronics
Radio frequency
Radiofrequency amplifiers
Silicon compounds
Variability
Voltage
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Summary:In this paper, a new emitter-sharpened double-gate race-track-shaped field emitter structure is reported. The race-track-shaped edge emission with double-gate control is used to provide high uniformity FEAs over a large area without the need of expensive submicron technology. In order to minimize the gate current, which is detrimental to the field emitter performance, an emitter-sharpened structure is used. Experimental results show that the turn-on voltage of the emitter-sharpened double-gate structure is 45 V, which is 60% smaller than that of the single-gate structure (110 V). Furthermore, the gate current of the emitter-sharpened double-gate structure is 7 times and 15 times smaller than that of the nonemitter-sharpened double-gate structure and the single-gate structure, respectively.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.806104