Vertical cavity blue InGaN/GaN MQW light emitting devices using substrate separation and substrate transfer techniques

Reports a new method for fabricating III-nitride vertical cavity light emitting devices using laser induced substrate separation (LISS) and electrolytic substrate transfer techniques. As a demonstration, we illustrate two types of structures: (a) a high-Q optical resonator structure with dielectric...

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Bibliographic Details
Main Authors: Song, Y.-K., Diagne, M., Zhou, H., Nurmikko, A.V., Carter-Coman, C., Kern, R.S., Kish, F.A., Krames, M.R.
Format: Conference Proceeding
Language:English
Subjects:
Dielectric substrates
Distributed Bragg reflectors
Gallium nitride
Light emitting diodes
Optical pumping
Optical resonators
Pump lasers
Quantum well devices
Stimulated emission
Vertical cavity surface emitting lasers
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Summary:Reports a new method for fabricating III-nitride vertical cavity light emitting devices using laser induced substrate separation (LISS) and electrolytic substrate transfer techniques. As a demonstration, we illustrate two types of structures: (a) a high-Q optical resonator structure with dielectric DBR stacks suitable for optically pumped VCSEL operation, and (b) a vertical injection LED with an asymmetric cavity formed by a metallic mirror and a single dielectric DBR stack. Both structures have been designed and fabricated from OMVPE grown InGaN/GaN MQW heterostructure material grown on sapphire substrates.
DOI:10.1109/DRC.1999.806338