Visible and infrared electroluminescence from Er-doped GaN Schottky diodes

Room temperature visible light electroluminescence (EL) has been obtained for the first time from Er-doped GaN Schottky barrier diodes. The EL intensity for visible and IR light was found to increase linearly with bias current density. An external quantum efficiency of >0.1% has been measured und...

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Bibliographic Details
Main Authors: Steckl, A.J., Garter, M., Birkhahn, R.
Format: Conference Proceeding
Language:English
Subjects:
Current density
Current measurement
Density measurement
Electroluminescence
Gallium nitride
Global warming
Indium tin oxide
Light emitting diodes
Schottky diodes
Stimulated emission
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Summary:Room temperature visible light electroluminescence (EL) has been obtained for the first time from Er-doped GaN Schottky barrier diodes. The EL intensity for visible and IR light was found to increase linearly with bias current density. An external quantum efficiency of >0.1% has been measured under a reverse bias current of 3.85 mA.
DOI:10.1109/DRC.1999.806372