Multilevel SOT-MRAM cell with a novel sensing scheme for high-density memory applications

This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOT-MRAMs can be questioned in hi...

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Bibliographic Details
Main Authors: Zeinali, Behzad, Esmaeili, Mahsa, Madsen, Jens K., Moradi, Farshad
Format: Conference Proceeding
Language:English
Subjects:
Magnetic tunneling
Magnetization
Mathematical model
Multilevel cell
p-MTJ
Resistance
Sensing scheme
Sensors
SOT-MRAM
Spin-Hall Effect
Switches
Thermal stability
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Summary:This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOT-MRAMs can be questioned in high-density memory application. To deal with this obstacle, we propose a multilevel cell which stores two bits per memory cell. In addition, we propose a novel sensing scheme to read out the stored data in the multilevel SOT-MRAM cell. Our simulation results show that the proposed cell can achieve 3X more energy efficient write operation in comparison with the conventional STT-MRAMs. In addition, the proposed cell store two bits without any area penalty in comparison to the conventional one bit SOT-MRAM cells.
ISSN:2378-6558
DOI:10.1109/ESSDERC.2017.8066619