Influence of Nanovoids Depth on the Surface Magneto-Optical Kerr Effect Modulations in Magnetic Photonic Crystal Slab

Magnetic photonic crystal slab with nanovoids buried in Ni films were fabricated using nanosphere lithography combined with electrochemical deposition. One featured structure was dominated the spectra of polar surface magneto-optical Kerr effect (MOKE) of samples with different voids depth. For the...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics journal 2017-12, Vol.9 (6), p.1-9
Main Authors: Zhang, Xia, Li, Jing, Xia, Yunjie, Cao, Ke, Zhang, Xu, Wang, Yuying, Sun, Xuebo
Format: Article
Language:English
Subjects:
ARPS
Lattices
localized plasmons
Magnetic materials
MOKE
Nanosphere lighography
Nickel
Nonlinear optics
Photonic crystals
Plasmons
Slabs
SLR
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Magnetic photonic crystal slab with nanovoids buried in Ni films were fabricated using nanosphere lithography combined with electrochemical deposition. One featured structure was dominated the spectra of polar surface magneto-optical Kerr effect (MOKE) of samples with different voids depth. For the shallow ones, surface lattice resonance (SLR) was revealed through angle resolved spectra analysis, where the location of degeneracy points corresponded to that of the featured structure in MOKE signal. For the deeper ones, localized plasmons and degeneracy points were all demonstrated in angle resolved reflection spectra, where localized plasmons dominated the resonant MOKE signal, and the degeneracy points blue-shifted compared with that of shallow ones. Changing the lattice of samples, similar phenomena were presented. The physical mechanism of SLR could be attributed to the diffraction of surface plasmons by the reciprocity vector, and the localized plasmons were attributed to the Mie scattering. The featured structure in polar MOKE spectra demonstrated high sensitivity, which might pave the way to on-chip MO devices.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2017.2763603