Lasing of optically pumped GeSn micro-structures grown on step-graded GeSn buffers

We report optically pumped lasing from GeSn micro-disks with high Sn content active GeSn layers. Buffer layers made by a step-growth show enhanced performances compared to conventional Ge strain relaxed buffers.

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Bibliographic Details
Main Authors: Reboud, V., Gassenq, A., Pauc, N., Aubin, J., Thai, Q. M., Bertrand, M., Milord, L., Martinez, E., Licitra, C., Rouchon, D., Rothman, J., Pilon, F. Armand, Zabel, T., Sigg, H., Chelnokov, A., Hartmann, J. M., Calvo, V.
Format: Conference Proceeding
Language:English
Subjects:
Etching
Gain materials
Germanium-Tin
Group IV lasers
Optical buffering
Optical pumping
Photoluminescence
Photonics
Silicon photonics
Stimulated emission
Strain
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Description
Summary:We report optically pumped lasing from GeSn micro-disks with high Sn content active GeSn layers. Buffer layers made by a step-growth show enhanced performances compared to conventional Ge strain relaxed buffers.
ISSN:1949-209X
DOI:10.1109/GROUP4.2017.8082172