Atoms-to-circuits simulation investigation of CNT interconnects for next generation CMOS technology

• Main Authors: Jaehyun Lee, Jie Liang, Amoroso, Salvatore M., Sadi, Toufik, Liping Wang, Asenov, Flamen, Pender, Andrew, Reid, Dave T., Georgiev, Vihar P., Millar, Campbell, Todri-Sanial, Aida, Asenov, Asen
• Format: Conference Proceeding
• Language: English
• Subjects: Carbon nanotubes; carbon nanotubes (CNTs); circuit simulation; Conductivity; Cu-CNT composites; Delays; Density Functional Theory (DFT); hierarchical models; Integrated circuit interconnections; Integrated circuit modeling; interconnects; Quantum capacitance
• ISSN: 1946-1569; 1946-1577
• DOI: 10.23919/SISPAD.2017.8085287

In this study, we suggest a hierarchical model to investigate the electrical performance of carbon nanotube (CNT)- based interconnects. From the density functional theory, we have obtained important physical parameters, which are used in TCAD simulators to obtain the RC netlists. We then use these RC netlists for the circuit-level simulations to optimize interconnect design in VLSI. Also, we have compared various CNT-based interconnects such as single-walled CNTs, multi-walled CNTs, doped CNTs, and Cu-CNT composites in terms of conductivity, ring oscillator delay, and propagation time delay.