Design of high performance Graphene/Silicon photodetectors

A thin layer of graphene on a light absorbing substrate (e.g., Silicon (Si)) is capable of an ultrahigh sensitivity for light detection. Demonstrated in both 2 terminal (diode) and 3 terminal (MOSFET) configurations, graphene on Si devices can outperform conventional photodetectors in detecting weak...

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Bibliographic Details
Main Authors: Iqbal, Saqib, Imran, Hassan, Qasim, Usama B., Butt, Nauman Z.
Format: Conference Proceeding
Language:English
Subjects:
Doping
Graphene
Photodetectors
Photonics
quantum gain
responsivity
Semiconductor process modeling
Silicon
Substrates
Online Access:Request full text
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Summary:A thin layer of graphene on a light absorbing substrate (e.g., Silicon (Si)) is capable of an ultrahigh sensitivity for light detection. Demonstrated in both 2 terminal (diode) and 3 terminal (MOSFET) configurations, graphene on Si devices can outperform conventional photodetectors in detecting weak light signals. High photo responsivity in graphene on Si originates from substrate a combined effect of (i) graphene doping due to photo generated carrier injection from substrate, and, (ii) high carrier mobility of graphene which enable a large quantum gain. Here we explore the design parameters that affect the photo induced graphene doping using self-consistent numerical simulations. We note that photo response can be substantially improved when substrate carriers have low mobility and high lifetime. The apparently counter-intuitive dependence of photo response on substrate's mobility is physically explained.
ISSN:1946-1569
1946-1577
DOI:10.23919/SISPAD.2017.8085300