4-20 GHz GaAs True-Time Delay Amplifier MMIC

A wideband amplifier with a fine control of the true-time delay (TTD) has been successfully implemented using a commercial 0.5-μm GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. The proposed circuit effectively combines switching elements into an artificial transmission line struc...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2017-12, Vol.27 (12), p.1119-1121
Main Authors: Shin, Dong-Hwan, Yom, In-Bok, Kim, Dong-Wook
Format: Article
Language:English
Subjects:
Active electronically scanned array (AESA)
Cutoff frequency
Delays
distributed amplifier (DA)
Distributed amplifiers
GaAs pHEMT
Gallium arsenide
MMICs
monolithic microwave integrated circuit (MMIC)
PHEMTs
Power transmission lines
true-time delay (TTD)
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Summary:A wideband amplifier with a fine control of the true-time delay (TTD) has been successfully implemented using a commercial 0.5-μm GaAs pHEMT monolithic microwave integrated circuit (MMIC) process. The proposed circuit effectively combines switching elements into an artificial transmission line structure in a distributed amplifier to achieve an adjustable TTD which enables time delay control with gain in a wider band than other GaAs-based TTD circuits. The TTD amplifier MMIC achieves a controllable delay of 9 ps, a gain of 9 to 2 dB, and a typical return loss of more than 10 dB from 4 to 20 GHz. The proposed TTD amplifier can be effectively integrated into a multifunction chip based on GaAs semiconductors for wideband active electronically scanned array or phased array systems.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2017.2763754