Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications

We have described a planar, bulk-ZnP APD fabricated using mature production processes which is simultaneously capable of 85 GHz gain-bandwidth products, peak bandwidths in excess of 10 GHz, and low-gain (M

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Bibliographic Details
Main Authors: Itzler, M.A., Loi, K.K., McCoy, S., Codd, N., Komaba, N.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Avalanche photodiodes
Bit rate
Electric breakdown
Indium gallium arsenide
Indium phosphide
Manufacturing
Optical buffering
Optical receivers
P-i-n diodes
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Description
Summary:We have described a planar, bulk-ZnP APD fabricated using mature production processes which is simultaneously capable of 85 GHz gain-bandwidth products, peak bandwidths in excess of 10 GHz, and low-gain (M
ISSN:1092-8081
2766-1733
DOI:10.1109/LEOS.1999.811950