Introducing the NV-GSD-HE3, a new high energy implanter

A new high energy implanter, the NV-GSD-HE3, improving upon the design concepts of the industry-leading GSD/HE series, has been developed in order to meet new and future device process requirements. Besides processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package t...

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Bibliographic Details
Main Authors: Sugitani, M., Tsukihara, M., Takei, S., McIntryre, E., DeLuca, D., Parrill, T.
Format: Conference Proceeding
Language:English
Subjects:
Boron
Costs
Energy consumption
Helium
Manufacturing
Packaging
Production
Throughput
Toy industry
Voltage
Online Access:Request full text
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Summary:A new high energy implanter, the NV-GSD-HE3, improving upon the design concepts of the industry-leading GSD/HE series, has been developed in order to meet new and future device process requirements. Besides processing 300-mm wafers, the HE3 produces higher ion energies than the GSD/HE in a package that incorporates higher efficiency linear accelerator technology. The system layout has also been optimized so that footprint is reduced compared to the GSD/VHE while maintaining the same twin well and triple well process capability. A new endstation capable of batch processing 300-mm wafers, at a mechanical throughput equal to or exceeding that for 200-mm wafers in the GSD/HE system, has been developed. An evolutionary beam line has been developed, including a new mass-analysis magnet, final energy magnet and resonators with increased voltage output and higher efficiency. The HE3 also incorporates the extended life source technology, designed to obtain high beam current and long source life for multiply charged ions.
DOI:10.1109/IIT.1999.812085