Effect of photo-resist treatment on out-gassing in high energy implantation

To reduce the out-gassing level of thick photoresist films for high energy implantation, we have examined different types of the resist treatment such as the methods of hard bake, UV bake and e-beam exposure prior to ion implantation. With the help of Scanning Electron Microscopy (SEM) measurement,...

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Bibliographic Details
Main Authors: Hong, S.K., Jeon, S.H., Min, K., Sohn, Y.S., Lee, S.K., Ahn, D.J.
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Electronics industry
Fabrication
Fluid flow measurement
Ion beams
Ion implantation
Pollution measurement
Resists
Scanning electron microscopy
Thermal resistance
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Summary:To reduce the out-gassing level of thick photoresist films for high energy implantation, we have examined different types of the resist treatment such as the methods of hard bake, UV bake and e-beam exposure prior to ion implantation. With the help of Scanning Electron Microscopy (SEM) measurement, it was found that the photo-resist treated with e-beam did not show any noticeable deformation before and after ion implantation, whilst the other two methods showed severe deformation of the resist due to flow and reticulation after the resist treatment. Furthermore, the e-beam treated case showed comparatively lower out-gassing level than another two methods during high energy ion implantation. The effects of e-beam treatment on the device characteristics were also evaluated, and no degradation was found comparing with the case of no bake.
DOI:10.1109/IIT.1999.812160