Atomic scale modeling of boron transient diffusion in silicon

We present results from predictive atomic level simulation of boron diffusion in silicon under a wide variety of implant and annealing conditions. The parameters for this simulation have been extracted from first principles approximation models and molecular dynamics simulations. The results are com...

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Bibliographic Details
Main Authors: Caturla, M.J., Lilak, A., Johnson, M.D., Giles, M., Diaz de la Rubia, T., Law, M., Foad, M.
Format: Conference Proceeding
Language:English
Subjects:
Boron
Computational modeling
Implants
Ion implantation
Kinetic theory
Monte Carlo methods
Predictive models
Semiconductor process modeling
Silicon
Simulated annealing
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Summary:We present results from predictive atomic level simulation of boron diffusion in silicon under a wide variety of implant and annealing conditions. The parameters for this simulation have been extracted from first principles approximation models and molecular dynamics simulations. The results are compared with experiments showing good agreement final cases. The parameters and reactions used have been implemented into a continuum-level model simulator.
DOI:10.1109/IIT.1998.813853