Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition

Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition was investigated. Deposition was performed both with and without the excess nitrogen gas near the substrate. The electrical resistivity and the crystallinity of the deposited films...

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Bibliographic Details
Main Authors: Gotoh, Y., Shiigi, T., Nagao, M., Tsuji, H., Ishikawa, J.
Format: Conference Proceeding
Language:English
Subjects:
Cathodes
Conducting materials
Ion beams
Ion sources
Nitrogen
Sputtering
Substrates
Temperature
Transistors
Zirconium
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Summary:Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition was investigated. Deposition was performed both with and without the excess nitrogen gas near the substrate. The electrical resistivity and the crystallinity of the deposited films were investigated as a function of the substrate temperature. As a result, it was shown that the electrical resistivity of the films deposited at the substrate temperature lower than 400/spl deg/C, rapidly increased with a decrease in the substrate temperature. The results could be summarized that the high ambient pressure influences the film property even in the ion beam assisted deposition.
DOI:10.1109/IIT.1998.813880