A bandgap voltage reference using digital CMOS process

This work describes some issues and criteria for the design of a bandgap voltage reference. It examines a particular voltage reference architecture, characteristics of the operational amplifier, parasitic bipolar transistor biasing currents and the start-up circuit. Test circuits have been fabricate...

Full description

Saved in:
Bibliographic Details
Main Authors: Vermaas, L.L.G., De Mori, C.R.T., Moreno, R.L., Pereira, A.M., Charry R., E.
Format: Conference Proceeding
Language:English
Subjects:
Bipolar transistors
Circuit testing
CMOS process
Doping
MOSFETs
Operational amplifiers
Photonic band gap
Power supplies
Temperature
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This work describes some issues and criteria for the design of a bandgap voltage reference. It examines a particular voltage reference architecture, characteristics of the operational amplifier, parasitic bipolar transistor biasing currents and the start-up circuit. Test circuits have been fabricated in the AMS 0.8 /spl mu/m n-well CMOS process. Experimental results yield an output voltage which is constant within 0.72% over the temperature range of -40/spl deg/C to 95/spl deg/C and the power supply range of 5 V/spl plusmn/10%.
DOI:10.1109/ICECS.1998.814886