Reliability analysis of low noise amplifiers for wireless applications under high RF power stressing

A reliability study under high RF power stressing was conducted on two SiGe cascode Low Noise Amplifiers (LNA) using an in-house reliability tool. The first LNA was stressed at 19 dBm of RF power during 600 hours. Obtained results (relative degradation values in dB) showed a decrease of 11% in the s...

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Bibliographic Details
Main Authors: Doukkali, Aziz, Lahbib, Insaf, Gamand, Patrice, Martin, Patrick, Lesenechal, Dominique, Descamps, Philippe
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Gain
gain degradation
Integrated circuit modeling
LNA Reliability
mixed mode degradation
noise figure increase
Radio frequency
Reliability
reverse base-emitter bias
Stress
Stress measurement
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Summary:A reliability study under high RF power stressing was conducted on two SiGe cascode Low Noise Amplifiers (LNA) using an in-house reliability tool. The first LNA was stressed at 19 dBm of RF power during 600 hours. Obtained results (relative degradation values in dB) showed a decrease of 11% in the small-signal gain (S 21 ), while the second was stressed at 20 dBm of RF power during non-stop 600 hours. The results, under these conditions, showed a decrease of 12% in the S 21 and an increase of 13.8% in the Noise Figure (NF). All predictive degradation simulations were compared to measurements demonstrating a satisfactory agreement.
ISSN:2162-1039
DOI:10.1109/ATC.2017.8167602