Simulation and fabrication of AlGaAs/InGaAs/GaAs power PHEMT for MMIC applications at 35 GHz

In this paper, AlGaAs/InGaAs/GaAs power PHEMT was simulated by ATLAS, and fabricated with T-gate process. Measured performance of the PHEMT agreed well with that of simulation. S/sub 21/ of 3.6 dB was measured at 35 GHz with f/sub T/ over 45 GHz, and f/sub max/ over 100 GHz. The PHEMT was also analy...

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Bibliographic Details
Main Authors: Seong Dae Lee, Jong Gon Heo, Seong Hwan Yang, Jin Koo Rhee
Format: Conference Proceeding
Language:English
Subjects:
Etching
Fabrication
Fingers
Gallium arsenide
Indium gallium arsenide
PHEMTs
Power engineering and energy
Power generation
Radio frequency
Voltage
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Summary:In this paper, AlGaAs/InGaAs/GaAs power PHEMT was simulated by ATLAS, and fabricated with T-gate process. Measured performance of the PHEMT agreed well with that of simulation. S/sub 21/ of 3.6 dB was measured at 35 GHz with f/sub T/ over 45 GHz, and f/sub max/ over 100 GHz. The PHEMT was also analyzed at 35 GHz for the variations in MAG according to gate and drain biases, and also for the changes in MAG and the output power against the unit gate width and the number of gate fingers.
DOI:10.1109/TENCON.1999.818620