Double-side planar-doped AlGaAs/InGaAs/AlGaAs MODFET with current density of 1 A/mm

AlGaAs/InGaAs/AlGaAs double-side planar-doped (DSPD) pseudomorphic MODFETs of 0.3- mu m gate length with both excellent DC and RF performances are reported. A maximum unilateral gain cutoff frequency of 170 GHz and a maximum current gain cutoff frequency of 60 GHz are achieved. The devices exhibit a...

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Bibliographic Details
Published in:IEEE electron device letters 1991-06, Vol.12 (6), p.327-328
Main Authors: Dickmann, J., Daembkes, H., Nickel, H., Schlapp, W., Losch, R.
Format: Article
Language:English
Subjects:
Applied sciences
Current density
Cutoff frequency
Doping
Electronics
Exact sciences and technology
Gallium arsenide
HEMTs
Indium gallium arsenide
MODFETs
Molecular beam epitaxial growth
Nickel
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:AlGaAs/InGaAs/AlGaAs double-side planar-doped (DSPD) pseudomorphic MODFETs of 0.3- mu m gate length with both excellent DC and RF performances are reported. A maximum unilateral gain cutoff frequency of 170 GHz and a maximum current gain cutoff frequency of 60 GHz are achieved. The devices exhibit a maximum transconductance of 500 mS/mm and an extremely high current density of 1 A/mm. These are the highest frequencies reported so far for MODFET devices capable of driving 1-A/mm current density. This current density is the highest ever reported with this type of layer structure.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.82076