Simulation method and application for the hot carrier-induced device degradation of NMOSFET

Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulat...

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Bibliographic Details
Main Authors: Sun-Ghil Lee, Jae-Hoon Choi, Sang-Yong Kim, Myung-Hee Nam, Joo-Hyeon Lee, Kang-Bong Seo, Han-Sub Yoon
Format: Conference Proceeding
Language:English
Subjects:
Data mining
Degradation
Electron traps
FETs
Hot carriers
Medical simulation
MOSFET circuits
Occupational stress
Physics
Shape control
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Summary:Hot carriers deteriorate the interface between Si and gate oxide, which causes the change of current level. We suggest a method for simulating hot carrier-induced device degradation. Based on the present model, we are able to calculate degraded I-V characteristics with time using 2-D process simulation TSUPREM-4 and 2-D device simulator MEDICI. We compare simulated results with experimental ones.
DOI:10.1109/ICVC.1999.820818