Applications of intense pulsed light ion beams to materials science

By an intense pulsed light ion beam (LIE) interaction with target, high density ablation plasma is produced (ion beam ablation plasma: IBAP) due to short range of LIE. Since the first preparation of thin films of ZnS by IBAP in 1988 (ion beam evaporation: IBE), we prepared various kinds of thin film...

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Bibliographic Details
Main Authors: Yatsui, K., Jiang, W., Harada, N., Sonegawa, T.
Format: Conference Proceeding
Language:English
Subjects:
Cooling
Identity-based encryption
Ion beams
Materials science and technology
Plasma applications
Plasma density
Plasma materials processing
Substrates
Transistors
Zinc compounds
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Summary:By an intense pulsed light ion beam (LIE) interaction with target, high density ablation plasma is produced (ion beam ablation plasma: IBAP) due to short range of LIE. Since the first preparation of thin films of ZnS by IBAP in 1988 (ion beam evaporation: IBE), we prepared various kinds of thin films. In addition to standard front side deposition by IBE (FS/IBE), where a substrate is located in front of the target, significant improvement has been achieved of the film quality by back side deposition (BS/IBE), where the substrate is placed just behind the holder. Characteristics of the films by BS/IBE are shown. By rapid cooling of IBAP, we synthesized nanosize powders. Fullerene has also been successfully prepared. Furthermore, foil acceleration has been studied by the irradiation of LIE on a target. Quick overview is given on the applications of IBAP in materials science.
DOI:10.1109/BEAMS.1998.822398