A 256\times256 , 100-kfps, 61% Fill-Factor SPAD Image Sensor for Time-Resolved Microscopy Applications

A 256 × 256 single-photon avalanche diode image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16 μm is reported. An all-nMOS 7T pixel allows gated operation down to 4 ns and ~600-ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture rat...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-02, Vol.65 (2), p.547-554
Main Authors: Gyongy, Istvan, Calder, Neil, Davies, Amy, Dutton, Neale A. W., Duncan, Rory R., Rickman, Colin, Dalgarno, Paul, Henderson, Robert K.
Format: Article
Language:English
Subjects:
CMOS single-photon avalanche diode (SPAD)
Image sensors
Lenses
Logic gates
Microoptics
Microscopy
Photonics
quanta image sensor
single-photon counting (SPC)
switched current source (SCS) counter
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Summary:A 256 × 256 single-photon avalanche diode image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16 μm is reported. An all-nMOS 7T pixel allows gated operation down to 4 ns and ~600-ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio in rolling shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying charge-coupled devices while offering time-resolved imaging modes.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2779790