Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universa...

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Bibliographic Details
Published in:IEEE electron device letters 2018-02, Vol.39 (2), p.212-215
Main Authors: Wang, Wei-Hsiang, Heredia, Elica, Lyu, Syue-Ru, Liu, Shu-Hao, Liao, Po-Yung, Chang, Ting-Chang, Jiang, Pei-hsun
Format: Article
Language:English
Subjects:
Amorphous magnetic materials
Conductivity
Electrodes
IGZO
Interference
Localization
Logic gates
Quantum interference
Semiconductor devices
spintronics
TFT
Thin film transistors
Transistors
Two dimensional displays
Voltage measurement
weak antilocalization
weak localization
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Summary:We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2786547