InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C~550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and...

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Bibliographic Details
Main Authors: Lung-I Chou, Li-Yi Peng, Hsiang-Chun Wang, Hsien-Chin Chiu, How-Ting Wang, Dong-Long Chiang, Jen-Inn Chyi
Format: Conference Proceeding
Language:English
Subjects:
Annealing
GaN
HEMTs
InAlN
Metals
microwave annealing (MWA)
Microwave transistors
Ohmic contacts
Surface morphology
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Summary:In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C~550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and smoother Ohmic contact surface than traditional rapid thermal annealing (RTA). The situation of Indium diffusion and device gate leakage current has been improved by this technique. Moreover, the reliability and RF performance of MWA-HEMT has a better result than RTA-HEMT.
ISSN:2374-8443
DOI:10.1109/CSICS.2017.8240448