Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics

We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the...

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Bibliographic Details
Main Authors: Ming-Hao Kuo, Liu, B. J., Huang, T. L., Lin, H. C., Pei-Wen Li
Format: Conference Proceeding
Language:English
Subjects:
Dark current
Lighting
Linearity
Logic gates
Photoconductivity
Pins
Silicon
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Summary:We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 10 3 -10 8 A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for P i n = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.
ISSN:2161-4644
DOI:10.23919/SNW.2017.8242330