High-k metal gate fundamental learning and multi-Vt options for stacked nanosheet gate-all-around transistor

In this paper, we report multi-threshold-voltage (multi-Vt) options for stacked Nanosheet gate-all-around (GAA) transistors. V t can be modulated through workfunction metal (WFM) thickness as well as the inter-nanosheet spacing (T sus ), the combination of which may be leveraged to increase the numb...

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Main Authors: Jingyun Zhang, Ando, Takashi, Chun Wing Yeung, Miaomiao Wang, Ohseong Kwon, Galatage, Rohit, Chao, Robin, Loubet, Nicolas, Bum Ki Moon, Ruqiang Bao, Vega, Reinaldo A., Juntao Li, Chen Zhang, Zuoguang Liu, Myunggil Kang, Xin Miao, Junli Wang, Kanakasabapathy, Sivananda, Basker, Veeraraghavan S., Jagannathan, Hemanth, Yamashita, Tenko
Format: Conference Proceeding
Language:English
Subjects:
FinFETs
Gallium arsenide
Logic gates
Metals
Modulation
Sensitivity
Silicon
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Summary:In this paper, we report multi-threshold-voltage (multi-Vt) options for stacked Nanosheet gate-all-around (GAA) transistors. V t can be modulated through workfunction metal (WFM) thickness as well as the inter-nanosheet spacing (T sus ), the combination of which may be leveraged to increase the number of undoped V t offerings within a CMOS device menu relative to a FinFET CMOS device menu, which fundamentally does not have T sus as a V t tuning option. Hence we propose our multi-V t scheme by taking advantage of the unique structure of stacked GAA transistor.
ISSN:2156-017X
DOI:10.1109/IEDM.2017.8268438