Comparison of Intersubband Quantum-Well and Interband Graphene-Layer Infrared Photodetectors

We compare the characteristics of the intersubband quantum-well infrared photodetectors (QWIPs) based on the traditional semiconductor materials and the interband graphene-layer infrared photodetectors (GLIPs) based on van der Waals heterostructures. We show that the responsivity and dark-current-li...

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Published in:IEEE journal of quantum electronics 2018-04, Vol.54 (2), p.1-8
Main Authors: Ryzhii, Victor, Otsuji, Taichi, Karasik, Valery E., Ryzhii, Maxim, Leiman, Vladimir G., Mitin, Vladimir, Shur, Michael S.
Format: Article
Language:English
Subjects:
Absorption
Charge carrier processes
Graphene
infrared photodetector
Photodetectors
Photonics
Quantum well
Quantum wells
Tunneling
van der Waals heterostructure
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description We compare the characteristics of the intersubband quantum-well infrared photodetectors (QWIPs) based on the traditional semiconductor materials and the interband graphene-layer infrared photodetectors (GLIPs) based on van der Waals heterostructures. We show that the responsivity and dark-current-limited detectivity of GLIPs exceed those of QWIPs. This is because of a stronger radiation interband absorption in the GLs, a smaller capture probability of electrons into the GLs, and a higher activation energy of the electron thermionic and tunneling escape from the GLs in comparison with those in the QWs.
doi_str_mv 10.1109/JQE.2018.2797912
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subjects Absorption
Charge carrier processes
Graphene
infrared photodetector
Photodetectors
Photonics
Quantum well
Quantum wells
Tunneling
van der Waals heterostructure
title Comparison of Intersubband Quantum-Well and Interband Graphene-Layer Infrared Photodetectors
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