High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin }} Interfacial Layer

The low mobility is a primary issue to prevent the practical application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this paper, we propose a route to resolve this issue by inserting an ultrathin {\text {AlO}}_{X} layer between the semiconductor film...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2018-03, Vol.65 (3), p.1113-1118
Main Authors: Xu, Meili, Guo, Shuxu, Xiang, Lanyi, Xu, Ting, Xie, Wenfa, Wang, Wei
Format: Article
Language:English
Subjects:
Ferroelectric memory
flexible nonvolatile memory (NVM)
high mobility
Logic gates
Morphology
Nonvolatile memory
organic field-effect transistor memory
Pentacene
Surface morphology
Surface treatment
Transistors
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Summary:The low mobility is a primary issue to prevent the practical application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this paper, we propose a route to resolve this issue by inserting an ultrathin {\text {AlO}}_{X} layer between the semiconductor film and the ferroelectric polymer film. A high mobility of 6.5 \text{cm}^{2}\cdot \text {V}^{-1}\cdot \text {s}^{-1} is achieved in the fabricated flexible Fe-OFET NVM, which also exhibits good memory performances with a large memory window of 17.2 V, a high memory on-off ratio up to 2 \times 10^{5} , reliable switching endurance property over 600 cycles, and stable retention capability with the memory on-off ratio larger than 10 2 over 10 4 s, at the low programming/erasing voltages of ±15 V.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2797936