0.8dB IL 46dBm OIP3 Ka band SPDT for 5G communication

In this paper, we first present the Ron versus frequency for different channel length devices, it shows the Ron advantages in narrow channel device in mm-Wave frequency range. Then investigated the single-pole double-throw (SPDT) design with NFET or PFET based on 45nm RFSOI process for 5G phased arr...

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Bibliographic Details
Main Authors: Li, Chaojiang, Ustundag, Berktug, Kumar, Arvind, Boenke, Myra, Kodak, Umut, Rebeiz, Gabriel
Format: Conference Proceeding
Language:English
Subjects:
5G mobile communication
Chaotic communication
CMOS
Correlation
Field effect transistors
Harmonic analysis
Ka band
Semiconductor device measurement
SOI
SPDT
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Summary:In this paper, we first present the Ron versus frequency for different channel length devices, it shows the Ron advantages in narrow channel device in mm-Wave frequency range. Then investigated the single-pole double-throw (SPDT) design with NFET or PFET based on 45nm RFSOI process for 5G phased array communication applications. Both NFET and PFET SPDTs are designed with similar design strategies and then implemented in silicon. For both SPDTs, the measured insertion loss (IL) is < 0.8dB at 28GHz, PFET SPDT show slightly better P1dB 29.5dBm versus 29dBm for NFET SPDT. Two-tone OIP3 is 46dBm. The die active area is 160μm × 25μm and can be used in the low cost phased array design.
ISSN:2474-9761
DOI:10.1109/SIRF.2018.8304213